| PART |
Description |
Maker |
| S70GL-P |
2 Gigabit, 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
|
SPANSION
|
| AT49SN12804 |
128M bit, 1.8-Volt Page Mode Flash Memory.
|
Atmel
|
| V53C316405A50 V53C316405A V53C316405A60 |
3.3 VOLT 4M x 4 EDO PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp
Mosel Vitelic Corp
|
| AT49SN6416-70CI AT49SN6416T-70CI AT49SN6416 AT49SN |
64-MEGABIT (4M X 16) BURST/PAGE MODE 1.8-VOLT FLASH MEMORY
|
ATMEL Corporation
|
| S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆，32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc.
PROM
Spansion, Inc.
SPANSION LLC
|
| S70GL01GN00 S70GL01GN0007 |
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit垄芒 Process Technology
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit?/a> Process Technology
|
SPANSION
|
| AT49SV12804 AT49SV12804-70TI AT49SN12804 |
128-megabit (8M x 16) Burst/Page Mode 1.8-volt Flash Memory
|
Atmel Corp.
|
| W29GL256SH9C W29GL256SL9B W29GL256SL9C W29GL256SH9 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| HFCT-5611 HFBR-5601 HFBR-0573 |
HFBR-5601 · Gigabit Interface Converters (GBIC) for Gigabit Ethernet
HFCT-5611 · Gigabit Interface Converters (GBIC) for Gigabit Ethernet
HFBR-0573 · Evaluation Kit for GBIC Gigabit Ethernet or Fibre Channel Applications
|
Agilent / Hewlett-Packard
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| S29GL064M90TFIR00 S29GL064M90TFIR02 S29GL064M90TFI |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
|
SPANSION
|
| S70GL01GN00FFI012 S70GL01GN00FFI013 S70GL01GN00FAI |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
|
SPANSION[SPANSION]
|
